Simulation Expertise: Learn and utilize commercially available TCAD simulators for semiconductor analysis
Modeling Enhancement: Contribute to developing improved TCAD modeling approaches for transient and radiation effect analysis in Si and GaN devices
Device Model Creation: Assist in creating predictive models for integrated Si power FETs, enabling accurate simulation of Single-Event Effects (SEE)
Compact Models: Support the development of compact Spice models for Si and GaN discrete products
Collaboration: Work within a team-oriented environment to develop innovative solutions in semiconductor engineering
You are best equipped for this task if you are/have:
Education: Actively pursuing a Bachelor’s or Master’s degree in Electrical Engineering, Physics, Material Science, Computer Science, or related fields
DevicePhysicsKnowledge: Building expertise in semiconductor device physics
Communication: Strong interpersonal and communication skills
Teamwork: Collaborative mindset for working effectively in a team environment
Self-Motivation: Self-driven with a desire to make significant contributions
SimulationExperience: Familiarity with TCAD device simulation is a plus
: This position requires access to documentation that is controlled by the export laws of the United States. Candidates are required to provide proof of either US citizenship, Permanent US residency, or classification as a protected individual as defined in 8USC 1324b(a)(3).
